Cathodoluminescence imaging for semiconductors
Use cathodoluminescence (CL) imaging to unveil the optoelectronic properties of semiconductors with nanoscale precision and wide spectral range from deep UV to IR. Benefit from this non-invasive technique with tunable electron penetration depth, allowing for depth-resolved studies and imaging of buried structures.
Probe local band edge emission and local defect band emission
Analyze point defects and delocalized defects
Image dopant distribution and carrier diffusion
Measure damage and strain in the material